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C10P20F Datasheet Download

Part No.:
C10P20F
Download:
Download Datasheet
Description:
[10.0 Ampere Heatsink Dual Common Cathode Fast Recovery Rectifiers]
File Size:
236 K
Page:
2 Pages
Logo:
Manufacturer:
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
PCB Prototype
 C10P20F Datasheet Page:2 
C10P20F thru C10P60F
C10P20F/C10P40F/C10P60F
Pb Free Plating Product
Pb
10.0 Ampere Heatsink Dual Common Cathode Fast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
TO-220AB(TO-220-3L)
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit:inch(mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
.038(0.96)
.019(0.50)
.177(4.5)MAX
Application
Automotive Inverters and Solar Inverters
Car Audio Amplifiers and Sound Device Systems
Plating Power Supply,Motor Control,UPS and SMPS etc.
.548(13.93)
.025(0.65)MAX
Mechanical Data
Case: Open Heatsink Package TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202 method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
.1(2.54)
.1(2.54)
Case
Case
Case
Case
Positive
Common Cathode
Suffix "F"
Negative
Common Anode
Suffix "FR"
Doubler
Tandem Polarity
Suffix "FD"
Series
Tandem Polarity
Suffix "FS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
C10P20F
200
140
200
C10P40F
400
280
400
10.0
C10P60F
600
420
600
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current Tc=100
(Total Device 2x5.0A=10.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)
Maximum Instantaneous Forward Voltage
@5.0A
(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25
At Rated DC Blocking Voltage @TJ=125
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
VRRM
VRMS
VDC
IF(AV)
V
V
V
A
IFSM
125
A
VF
0.98
1.3
1.7
V
IR
Trr
CJ
RθJC
TJ,TSTG
5.0
100
35
65
1.5
-55 to +150
μA
μA
nS
pF
℃/W
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/